已在Nat. Nanotechnol.、J. Am. Chem. Soc.、ACS Nano、Nano Lett.、Nanoscale等国际权威学术期刊发表相关SCI论文(且多为ESI高被引论文)18篇，获得专利2项，并多次参加国际学术会议并作报告。
[1]Li Honglai, Duan Xidong, Wu Xueping, Zhuang Xiujuan, Zhou Hong, Zhang Qinglin, Zhu Xiaoli, Hu Wei, Ren Pinyun, Guo Pengfei, Ma Liang, Fan Xiaopeng, Wang Xiaoxia, Xu Jinyou, Pan Anlian*, Duan Xiangfeng*. Growth of alloy MoS2xSe2(1−x) nanosheets with fully tunable chemical compositions and optical properties. J. Am. Chem. Soc., 2014, 136(10): 3756–3759
[2]Li Honglai, Zhang Qinglin, Duan Xidong, Wu Xueping, Fan Xiaopeng, Zhu Xiaoli, Zhuang Xiujuan, Hu Wei, Zhou Hong, Pan Anlian*, Duan Xiangfeng*. Lateral growth of composition graded atomic layer MoS2(1−x)Se2x nanosheets. J. Am. Chem. Soc., 2015, 137(16): 5284–5287
[3]Li Honglai, Wu Xueping, Liu Hongjun, Zheng Biyuan, Zhang Qinglin, Zhu Xiaoli, Wei Zheng, Zhuang Xiujuan, Zhou Hong, Tang Wenxin, Duan Xiangfeng, Pan Anlian*. Composition-Modulated Two-Dimensional Semiconductor Lateral Heterostructures via Layer-Selected Atomic Substitution. ACS Nano, 2017, 11(1): 961–967
[4]Wu Xueping, Li Honglai, Liu Hongjun, Zhuang Xiujuan, Wang Xiao, Fan Xiaopeng, Duan Xidong, Zhu Xiaoli, Zhang Qinglin, Duan Xiangfeng, Pan Anlian*. Spatially composition-modulated two-dimensional WS2xSe2(1-x) nanosheets. Nanoscale, 2017, 9, 4707–4712(并列第一作者)
[5]Duan Xidong*, Wang Chen, Shaw Jonathan C., Cheng Rui, Chen Yu, Li Honglai, Wu Xueping, Tang Ying, Zhang Qinglin, Pan Anlian*, Jiang Jianhui, Yu Ruqin, Huang Yu, Duan Xiangfeng*. Lateral epitaxial growth of two-dimensional layered semiconductor heterojunctions. Nat. Nanotechnol., 2014, 9: 1024–1030
[6]Chen Xinliang, Li Honglai, Qi Zhaoyang, Yang Tiefeng, Yang Yankun, Hu Xuelu, Zhang Xuehong, Zhu Xiaoli, Hu Wei, Pan Anlian*. Synthesis and optoelectronic properties of quaternary GaInAsSb alloy nanosheets. Nanotechnol., 2016, 27: 505602 (9pp)
[7]Zou Yaqin, Li Honglai, Ren Pinyun, Xu Jinyou, Ma Liang, Wang Xiaoxia, Fan Xiaopeng, Shan Zhengping, Zhuang Xiujuan, Zhou Hong, Zhu Xiaoli, Zhang Qinglin*, Pan Anlian*. Microphotoluminescence of individual ZnSe nanoribbons. Mater. Lett., 2014, 129: 118–121
[8]Ge Cuihuan, Li Honglai, Zhu Xiaoli*, Pan Anlian*. Band gap engineering of atomically thin two-dimensional semiconductors. Chin. Phys. B, 2017, 26(3): 034208
[9]Liu Jianzhe, Xia Congxin, Li Honglai, Pan Anlian*. High on/off ratio photosensitive field effect transistors based on few layer SnS2. Nanotechnol., 2016, 27: 34LT01 (6pp)
[10]Yang Yankun, Yang Tiefeng, Li Honglai, Qi Zhaoyang, Chen Xinliang, Wu Wenqiang, Hu Xuelu, He Pengbin, Jiang Ying, Hu Wei, Zhang Qinglin, Zhuang Xiujuan, Zhu Xiaoli*, Pan Anlian*. High performance photodetectors based on high quality InP nanowires. Chin. Phys. B, 2016, 25(11): 118106
